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PolarHVTM HiPerFET Power MOSFETs
N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated
Preliminary Data Sheet
IXFH 22N60P IXFT 22N60P
= = RDS(on) trr
VDSS ID25
600 V 22 A 330 m 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Tranisent TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 4 TC = 25C
Maximum Ratings 600 600 30 40 22 66 22 40 1.0 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C C
TO-247 (IXFT)
G
D
D (TAB) S
TO-268 (IXFT)
G
S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-247 TO-268 (TO-247)
300 250
1.13/10 Nm/lb.in. 6 5 g g
Features Fast intrinsic diode Unclamped Inductive Switching (UIS) rated International standard packages Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 100 25 250 330 V V nA A A m
Advantages Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2005 IXYS All rights reserved
DS99315(02/05)
IXFH 22N60P IXFT 22N60P www..com
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 15 21 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 305 38 20 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4 (External) 20 60 23 105 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 55 0.31 (TO-247) 0.21 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
1 2 3
TO-247 AD Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 20 V; ID = 0.5 ID25, pulse test
Dim.
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 22 66 1.5 A A V ns C
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 26A -di/dt = 100 A/s VR = 100V 250 1.0
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXFH 22N60P IXFT 22N60P www..com
Fig. 1. Output Characteristics @ 25C
22 20 18 16 VGS = 10V 8V 45 40 35 VGS = 10V 9V 8V 7.5V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
7.5V
I D - Amperes
14 12 10 8 6 4 2 0 0 1 2 3 4 5 6
30 25 20 15 10
7V
7V
6.5V 6V
6V
5 0
7
8
9
0
3
6
9
12
15
18
21
24
27
30
V D S - Volts Fig. 3. Output Characteristics @ 125C
22 20 18 16 VGS = 10V 8V 7V 3.4 3.1 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 11A I D = 22A
I D - Amperes
14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 5.5V 5V 6V 6.5V
-50
-25
0
25
50
75
100
125
150
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID
3 2.8 2.6 VGS = 10V 24
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
TJ = 125 C
20
R D S ( o n ) - Normalized
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 35 40 45 TJ = 25 C 4
I D - Amperes
16
12
8
0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
TC - Degrees Centigrade
(c) 2005 IXYS All rights reserved
IXFH 22N60P IXFT 22N60P www..com
Fig. 7. Input Adm ittance
30 27 24 30 27 24 TJ = -40 C 25 C 125 C
Fig. 8. Transconductance
18 15 12 9 6 3 0 4.5 5 5.5 6 6.5 7 7.5 8 TJ = 125 C 25 C -40 C
g f s - Siemens
I D - Amperes
21
21 18 15 12 9 6 3 0 0
3
6
9
12
15
18
21
24
27
30
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
70 60 8 50 7 10 9 VDS = 300V I D = 11A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 25 C 0.8 0.9 1 1.1
40 30 TJ = 125 C 20 10 0 0.4 0.5 0.6 0.7
6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 110
V S D - Volts
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
100
Fig. 11. Capacitance
10000 f = 1MHz
R DS(on) Limit
Capacitance - picoFarads
C iss 1000
I D - Amperes
25s 10 1ms 10ms TJ = 150C DC 100s
C oss 100
C rss 10 0 5 10 15 20 25 30 35 40 1 10
TC = 25C
100
1000
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V D S - Volts
IXFH 22N60P IXFT 22N60P www..com
Fig . 1 3 . M a x im u m T r an s ie n t T h e r m a l Re s is t a n c e
1.00
R ( t h ) J C - C / W
0.10
0.01 0.1 1 10 100 1000
Pu ls e W idth - millis e c o n ds
(c) 2005 IXYS All rights reserved

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